Research on next-generation semiconductor and display devices requires the miniaturization and three-dimensionalization of the components that comprise them. To understand the operation and reliability of these devices, it is crucial to measure and analyze the density and distribution of defects in the electronic structure, which affect their operating characteristics. However, existing defect measurement and analysis methods are limited to qualitative analyses that allow only relative comparisons or are focused on unit-level analysis. To identify the causes of defects and control the characteristics of various electronic devices based on these findings, a comprehensive, qualitative and quantitative understanding of defect measurement and analysis is crucial. This presentation will describe a non-destructive, non-contact analysis method that measures changes in optical signals as a function of space and time, qualitatively and quantitatively determining defect distribution and energy levels. Furthermore, we will discuss the development of an analytical technique applicable to in-line monitoring by extending this technique to large-area measurements and combining it with imaging technology to improve measurement speed, accuracy, and resolution.